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Inventi Impact: Acoustics

Articles

  • Inventi:eas/31788/20
    Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan Acoustic Scanning Microscopy
    Research 2020 : July - September
    Ibrahim M Abdel-Motaleb

    In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the\ndefects of three SiC samples. The acoustic images indicate that numerous defects\nwith different shapes and area sexist in the wafers. Some of the defects\nhave areas of more than 100,000 microm2. The number of defects ranges from 1 to\n50 defects/wafer. Defect mapping is essential for defect repairing or avoidance.\nThis work shows that ASM can locate the precise positions of the crystallographic\ndefects, which enables defects repair and yield enhancement.

    How to Cite this Article
    Attribution/ CC Compliant Citation: Abdel-Motaleb, I.M. (2020) Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan\nAcoustic Scanning Microscopy. Crystal Structure Theory and Applications, 9, 1-11.\nhttps://doi.org/10.4236/csta.2020.91001\nhttp://creativecommons.org/licenses/by/4.0/\n\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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